NEWS 23 February 2022

High-NA EUV lithography challenges – the imec perspective

In the course of 2025, the introduction of the first high-NA (numerical aperture) extreme ultraviolet (EUV) lithography equipment in high-volume manufacturing environments is foreseen.


These next-generation lithography systems will be key to advance Moore’s Law towards the logic 2-nm technology generation and beyond. In this Mikroniek article, imec scientists and engineers involved in preparing this major next step in semiconductor lithography (driven by equipment maker ASML) discuss challenges and opportunities. They highlight recent insights and progress obtained in developing the patterning processes, metrology and photomasks needed for enabling the high-NA EUV lithography infrastructure. (Image courtesy of imec)


References

Picometer drift and microrad reproducibility

At the end of May, Settels Savenije hosted a DSPE Knowledge Day dedicated to challenges in nanometrology.

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Order of frictions and stiffnesses…

For lumped systems consisting of different frictions and stiffnesses, there has been confusion in literature about hysteresis curves and virtual play for many decades.

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Make it clean

In mid-April, the second edition of the Manufacturing Technology Conference and the fifth edition of the Clean Event were held together, for the first time, at the Koningshof in Veldhoven (NL).

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