High-speed spatial Atomic Layer Deposition

A novel disruptive concept in Atomic Layer Deposition (ALD), developed by Dutch research organization TNO, can achieve breakthrough ultrafast Al2O3 deposition rates of 1 nm/s (currently limited to 0.1 nm/s). Using spatial ALD, instead of temporal (i.e. time-switched) ALD, TNO researchers deposit 30 nm of Al2O3 in 30 seconds. Compared to 20 minutes in an R&D single-wafer reactor, this opens up a wide range of industrial-scale applications with high industrial throughput and cost-effective manufacturing. A very promising application is to improve solar cell efficiency by depositing Al2O3 as a backside passivation layer.

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References

Order of frictions and stiffnesses…

For lumped systems consisting of different frictions and stiffnesses, there has been confusion in literature about hysteresis curves and virtual play for many decades.

Make it clean

In mid-April, the second edition of the Manufacturing Technology Conference and the fifth edition of the Clean Event were held together, for the first time, at the Koningshof in Veldhoven (NL).

Bringing particles to light

Particle contamination monitoring and cleanliness control are fundamental to micromanufacturing processes across diverse industries to achieve cost-effective production of high-quality and reliable microscale devices and components.